69 citations · 80 across the 9 of their papers we have counts for
9 papers
Hidden Defect Chemistry in Ion-Irradiated MoS Field-Effect Transistors Revealed by Photocurrent Loss
L. Daniel, D. Sutarma, L. Klieve +7
Defect engineering in monolayer MoS is a promising route to tune field-effect transistors (FETs), but the electronic response of defects in processed devices can be masked by c…
Ultrafast Charge Transfer Dynamics at the MoS/Au Interface Observed via Optical Spectroscopy under Ambient Conditions
Tao Yang, Zhipeng Huang, Stephan Sleziona +5
To take advantage of the exceptional properties of atomically thin transition metal dichalcogenides (TMDC) for advanced devices and catalysts, integration with metallic surfaces is…
Isolating the Nonlinear Optical Response of a MoS Monolayer under Extreme Screening of a Metal Substrate
Tao Yang, Stephan Sleziona, Erik Pollmann +5
Transition metal dichalcogenides (TMDCs) monolayers, as two-dimensional (2D) direct bandgap semiconductors, hold promise for advanced optoelectronic and photocatalytic devices. Int…
Manipulation of the electrical and memory properties of MoS field-effect transistors by highly charged ion irradiation
Stephan Sleziona, Aniello Pelella, Enver Faella +6
Field-effect transistors based on molybdenum disulfide (MoS) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hy…
Growth of p-doped 2D-MoS on metal oxides from spatial atomic layer deposition
André Maas, Kissan Mistry, Stephan Sleziona +4
In this letter we report on the synthesis of monolayers of MoS via chemical vapor deposition directly on thin films of AlO grown by spatial atomic layer deposition. The…
Lifetime of Excitons in Janus Monolayer MoSSe Prepared from Exfoliated MoSe_2
Jennifer Schmeink, Vladislav Musytschuk, Erik Pollmann +3
Janus monolayer transition metal dichalcogenides, where one of the two chalcogen layers is substituted with a different kind of chalcogen atoms, are pushing the properties of two d…
Memory effects in black phosphorus field effect transistors
Alessandro Grillo, Aniello Pelella, Enver Faella +5
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer char…
Gate-controlled field emission current from MoS nanosheets
Aniello Pelella, Alessandro Grillo, Francesca Urban +6
Monolayer molybdenum disulfide (MoS) nanosheets, obtained via chemical vapor deposition onto SiO/Si substrates, are exploited to fabricate field-effect transistors with n-t…
Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors
A. Pelella, O. Kharsah, A. Grillo +9
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…