159 citations · 285 across the 6 of their papers we have counts for
6 papers
Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates
M. A. Mastro, R. T. Holm, N. D. Bassim +6
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first…
Thickness dependent hydrophobicity of epitaxial graphene
M. Munz, C. E. Giusca, R. L. Myers-Ward +2
This article addresses the much debated question whether the degree of hydrophobicity of single-layer graphene (1LG) is different from the one of double-layer graphene (2LG). Knowl…
Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition
Zachary R. Robinson, Eng Wen Ong, Tyler R. Mowll +4
Understanding the influence that copper substrate surface symmetry and oxygen impurities have on the growth of graphene by chemical vapor deposition is important for developing tec…
Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect
P. Kühne, V. Darakchieva, J. D. Tedesco +8
We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown…
Two Dimensional Crystal Tunneling Devices for THz Operation
B. D. Kong, C. Zeng, D. K. Gaskill +2
Two dimensional (2D) crystal heterostructures are shown to possess a unique opportunity for novel THz nonlinear devices. In contrast to the oxide tunneling barrier, the uniformity…
Epitaxial Graphene Growth on SiC Wafers
D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell +17
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Corr…