199 citations · 870 across the 26 of their papers we have counts for
10 papers · 1 filter
III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
Michael A. Mastro, Travis J. Anderson, Marko J. Tadjer +4
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carb…
Nickel Foam as a Substrate for III-nitride Nanowire Growth
Michael A. Mastro, Neeraj Nepal, Fritz Kub +3
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting…
Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires
Michael A. Mastro, Hong-Youl Kim, Jaehui Ahn +5
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/Ga…
Plasmonically-Enhanced Emission from an Inverted GaN Light Emitting Diode
Michael A. Mastro, Byung-Jae Kim, J. A. Freitas +5
Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a…
Design of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates
Michael A. Mastro, Joshua D. Caldwell, Ron T. Holm +2
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times fo…
High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
M. A. Mastro, R. T. Holm, N. D. Bassim +4
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growin…
All Epitaxial Fabrication of a Nanowire Plasmon Laser Structure
Michael A. Mastro, Jaime A. Freitas, Jennifer K. Hite +1
An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surround…
Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates
M. A. Mastro, R. T. Holm, N. D. Bassim +6
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first…
Wurtzite III-nitride distributed Bragg reflectors on Si (100) substrates
M. A. Mastro, R. T. Holm, N. D. Bassim +4
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures…
Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
M. A. Mastro, J. K. Hite, C. R. Eddy +4
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epit…