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C. Eddy

27 papers hereh-index 426.7k citations407 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author16
  • last author5

Across the 21 of 27 papers where every author was matched, so the position is known.

fields
  • physics.app-ph10
  • cond-mat.mes-hall9
  • cond-mat.mtrl-sci7
  • cond-mat.str-el1
same name
  • C. Eddy — 1 paper, h 9

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20092021
most citedCorrelating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

199 citations · 870 across the 26 of their papers we have counts for

collaborators
Showing 2009 · cond-mat.mtrl-sciShow all

3 papers · 2 filters

cond-mat.mtrl-sci2009★ 33 cited

Epitaxial Graphene Growth on SiC Wafers

D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell +17

An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Corr…

cond-mat.mtrl-sci2009★ 34 cited

Graphene formation on SiC substrates

Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco +7

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial…

cond-mat.mtrl-sci2009★ 199 cited

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco +11

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the…

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