185 citations · 373 across the 10 of their papers we have counts for
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cond-mat.mtrl-sci2026
Fully Atomic-Layer-Deposited Vertical Complementary FeRAM with Ultra-High 2Pr > 100 uC/cm2 and High Endurance > 1E10 cycles
Renhao Xue, Ruizhan Yan, Mansun Chan +1
A limited remanent polarization (Pr) in HfO2-based FeRAM remains a key obstacle to density scaling and reliability, while material and process optimizations offer only incremental…
cond-mat.mtrl-sci2025
Can a ferroelectric diode be a selector-less, universal, non-volatile memory?
Soumya Sarkar, Xiwen Liu, Deep Jariwala
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes…
cond-mat.mtrl-sci2021★ 1 cited
A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor
Xiwen Liu, Jeffrey Zheng, Dixiong Wang +4
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandi…