185 citations · 373 across the 10 of their papers we have counts for
10 papers
Fully Atomic-Layer-Deposited Vertical Complementary FeRAM with Ultra-High 2Pr > 100 uC/cm2 and High Endurance > 1E10 cycles
Renhao Xue, Ruizhan Yan, Mansun Chan +1
A limited remanent polarization (Pr) in HfO2-based FeRAM remains a key obstacle to density scaling and reliability, while material and process optimizations offer only incremental…
Can a ferroelectric diode be a selector-less, universal, non-volatile memory?
Soumya Sarkar, Xiwen Liu, Deep Jariwala
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes…
Analog Content-Addressable Memory from Complementary FeFETs
Xiwen Liu, Keshava Katti, Yunfei He +6
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical…
Accelerate & Actualize: Can 2D Materials Bridge the Gap Between Neuromorphic Hardware and the Human Brain?
Xiwen Liu, Keshava Katti, Deep Jariwala
Two-dimensional (2D) materials present an exciting opportunity for devices and systems beyond the von Neumann computing architecture paradigm due to their diversity of electronic s…
Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes
Xiwen Liu, John Ting, Yunfei He +11
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing…
2D Metal Selenide-Silicon Steep Sub-Threshold Heterojunction Triodes with High On-Current Density
Jinshui Miao, Chloe Leblanc, Xiwen Liu +7
Low power consumption in both static and dynamic modes of operation is a key requirement in modern, highly scaled nanoelectronics. Tunneling field-effect transistors (TFETs) that e…
A CMOS Compatible Aluminum Scandium Nitride-based Ferroelectric Tunnel Junction Memristor
Xiwen Liu, Jeffrey Zheng, Dixiong Wang +4
We report a complementary metal oxide semiconductor (CMOS) technology compatible ferroelectric tunnel junction memristor grown directly on top of a Silicon substrate using a scandi…
Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor
Xiwen Liu, Dixiong Wang, Jeffrey Zheng +5
In 1963, Moll and Tarui suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a…
Giant gate-tunability of complex refractive index in semiconducting carbon nanotubes
Baokun Song, Fang Liu, Haonan Wang +11
Electrically-tunable optical properties in materials are desirable for many applications ranging from displays to lasing and optical communication. In most two-dimensional thin-fil…
Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces
Jinshui Miao, Xiwen Liu, Kiyoung Jo +8
Van der Waals (vdW) semiconductors are attractive for highly scaled devices and heterogeneous integration since they can be isolated into self-passivated, two-dimensional (2D) laye…