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1550 nm compatible ultrafast photoconductive material based on a GaAs/ErAs/GaAs heterostructure
Kedong Zhang, Yiwen Li, Yifeng Ren +8
The sub-bandgap absorption and ultrafast relaxation in a GaAs/ErAs/GaAs heterostructure are reported. The infrared absorption and 1550 nm-excited ultrafast photo-response are studi…
Large magnetoresistance observed in α-Sn/InSb heterostructures
Yuanfeng Ding, Huanhuan Song, Junwei Huang +7
In this study, we report the epitaxial growth of a series of α-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualitie…
Thermal Stability Enhancement in Epitaxial α-Sn Films by Strain Engineering
Huanhuan Song, Jinshan Yao, Yuanfeng Ding +5
Exploring new topological materials with large topological nontrivial bandgaps and simple composition is attractive for both theoretical investigation and experimental realization.…