activity
20182022
most citedSuperconducting Transition Temperature Modulation in NbN via EDL Gating

21 citations · 76 across the 5 of their papers we have counts for

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Showing 2018Show all

7 papers · 1 filter

cond-mat.mes-hall2018

Electrons imitating light: Frustrated supercritical collapse in charged arrays on graphene

Jiong Lu, Hsin-Zon Tsai, Alpin N. Tatan +10

The photon-like electronic dispersion of graphene bestows its charge carriers with unusual confinement properties that depend strongly on the geometry and strength of the surroundi…

cond-mat.mes-hall2018

Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS2 nanolayers

Erik Piatti, Davide Romanin, Renato S. Gonnelli

Gate-induced superconductivity at the surface of nanolayers of semiconducting transition metal dichalcogenides (TMDs) has attracted a lot of attention in recent years, thanks to th…

cond-mat.mtrl-sci2018

Towards the insulator-to-metal transition at the surface of ion-gated nanocrystalline diamond films

Erik Piatti, Francesco Galanti, Giulia Pippione +2

Hole doping can control the conductivity of diamond either through boron substitution, or carrier accumulation in a field-effect transistor. In this work, we combine the two method…

cond-mat.supr-con2018

Ambipolar suppression of superconductivity by ionic gating in optimally-doped BaFe2(As,P)2 ultrathin films

Erik Piatti, Takafumi Hatano, Dario Daghero +9

Superconductivity (SC) in the Ba-122 family of iron-based compounds can be controlled by aliovalent or isovalent substitutions, applied external pressure, and strain, the combined…

cond-mat.mes-hall2018

Anomalous screening of an electrostatic field at the surface of niobium nitride

Erik Piatti, Davide Romanin, Renato S. Gonnelli +1

The interaction between an electric field and the electric charges in a material is described by electrostatic screening, which in metallic systems is commonly thought to be confin…

cond-mat.mes-hall2018

Possible charge-density-wave signatures in the anomalous resistivity of Li-intercalated multilayer MoS2

Erik Piatti, Qihong Chen, Mauro Tortello +2

We fabricate ion-gated field-effect transistors (iFET) on mechanically exfoliated multilayer MoS. We encapsulate the flake by AlO, leaving the device channel exposed at…