64 citations · 170 across the 5 of their papers we have counts for
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In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition
Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya +5
High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$…
Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals
Rujun Sun, Yu Kee Ooi, Arkka Bhattacharyya +4
Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionall…
Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence
Rujun Sun, Yu Kee Ooi, Praneeth Ranga +3
In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor…
On the origin of red luminescence from iron-doped beta-Ga2O3 bulk crystals
Rujun Sun, Yu Kee Ooi, Peter T. Dickens +2
Currently, Fe doping in the ~10^18 cm-3 range is the most widely-available method for producing semi-insulating single crystalline beta-Ga2O3 substrates. Red luminescence features…