28 citations · 36 across the 6 of their papers we have counts for
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cond-mat.mtrl-sci2026
Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios
Xu Yang, Sheng Zhang, Ke Wei +4
We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3…
cond-mat.mtrl-sci2024★ 3 cited
Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE
Pietro Pampili, Markus Pristovsek
We report about metalorganic vapour phase epitaxy of smooth nitrogen-polar AlN templates on vicinal (0001) sapphire substrates. The influence of V/III ratio, growth temperature, gr…