28 citations · 36 across the 6 of their papers we have counts for
6 papers
Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios
Xu Yang, Sheng Zhang, Ke Wei +4
We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3…
Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE
Pietro Pampili, Markus Pristovsek
We report about metalorganic vapour phase epitaxy of smooth nitrogen-polar AlN templates on vicinal (0001) sapphire substrates. The influence of V/III ratio, growth temperature, gr…
Limitation of simple np-n tunnel junction based LEDs grown by MOVPE
Yoann Robin, Quentin Bournet, Geoffrey Avit +4
We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by trap-assisted (Poole-Frenkel) tunneling. This stems from observation…
Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high temperatures
Akihiro Ohtake, Shiro Tsukamoto, Markus Pristovsek +2
Structure of the Ga-stabilized GaAs(001)-c(8x2) surface has been studied using rocking-curve analysis of reflection high-energy electron diffraction (RHEED). The c(8x2) structure e…
As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy
Shiro Tsukamoto, Markus Pristovsek, Bradford G. Orr +3
As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed sim…
Ga-rich GaAs(001) surfaces observed during high-temperature annealing by scanning tunneling microscopy
Shiro Tsukamoto, Markus Pristovsek, Bradford G. Orr +3
Ga-rich GaAs (001) surfaces are successfully observed during high-temperature annealing by scanning tunneling microscopy (STM). With a substrate temperature of 550 C, reflection hi…