3 papers
physics.app-ph2020
Limitation of simple np-n tunnel junction based LEDs grown by MOVPE
Yoann Robin, Quentin Bournet, Geoffrey Avit +4
We show evidence that tunnel junctions (TJs) in GaN grown by metal-organic vapor phase epitaxy are dominated by trap-assisted (Poole-Frenkel) tunneling. This stems from observation…
physics.chem-ph2002
As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy
Shiro Tsukamoto, Markus Pristovsek, Bradford G. Orr +3
As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed sim…
physics.atm-clus2002
Ga-rich GaAs(001) surfaces observed during high-temperature annealing by scanning tunneling microscopy
Shiro Tsukamoto, Markus Pristovsek, Bradford G. Orr +3
Ga-rich GaAs (001) surfaces are successfully observed during high-temperature annealing by scanning tunneling microscopy (STM). With a substrate temperature of 550 C, reflection hi…