activity
19952023
most citedKondo Physics in a Single Electron Transistor

2.2k citations · 12.5k across the 95 of their papers we have counts for

collaborators
Showing 2010Show all

6 papers · 1 filter

cond-mat.mes-hall2010★ 34 cited

Spatially probed electron-electron scattering in a two-dimensional electron gas

M. P. Jura, M. Grobis, M. A. Topinka +3

Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, an…

cond-mat.mes-hall2010★ 23 cited

An integrated capacitance bridge for high-resolution, wide temperature range quantum capacitance measurements

Joseph A. Sulpizio, Arash Hazeghi, Georgi Diankov +2

We have developed a highly-sensitive integrated capacitance bridge for quantum capacitance measurements. Our bridge, based on a GaAs HEMT amplifier, delivers attofarad (aF) resolut…

cond-mat.mes-hall2010★ 29 cited

Coulomb Blockade in an Open Quantum Dot

S. Amasha, I. G. Rau, M. Grobis +3

We report the observation of Coulomb blockade in a quantum dot contacted by two quantum point contacts each with a single fully-transmitting mode, a system previously thought to be…

cond-mat.mes-hall2010★ 8 cited

Virtual Scanning Tunneling Microscopy: A Local Spectroscopic Probe of 2D Electron Systems

Adam Sciambi, Matthew Pelliccione, Seth R. Bank +2

We propose a novel probe technique capable of performing local low-temperature spectroscopy on a 2D electron system (2DES) in a semiconductor heterostructure. Motivated by predicte…

cond-mat.mes-hall2010★ 24 cited

Vertical Field-Effect Transistor Based on Wavefunction Extension

Adam Sciambi, Matthew Pelliccione, Michael P. Lilly +5

We demonstrate a mechanism for a dual layer, vertical field-effect transistor, in which nearly-depleting one layer will extend its wavefunction to overlap the other layer and incre…

cond-mat.mtrl-sci2010★ 124 cited

Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

Judy J. Cha, James R. Williams, Desheng Kong +6

A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, whic…