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most citedModelling background charge rearrangements near single-electron transistors as a Poisson process

7 citations · 7 across the 4 of their papers we have counts for

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cond-mat.mes-hall2000★ 7 cited

Modelling background charge rearrangements near single-electron transistors as a Poisson process

Heinz-Olaf Müller, Miha Furlan, Thomas Heinzel +1

Background charge rearrangements in metallic single-electron transistors are modelled in two-level tunnelling systems as a Poisson process with a scale parameter as only variable.…