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Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor
D. Shcherbakov, P. Stepanov, S. Memaran +14
Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inv…
Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg +11
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous r…
Field-Effect Transistors Based on Few-Layered alpha-MoTe_2
Nihar R. Pradhan, Daniel Rhodes, Simin Feng +6
Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We perfor…