230 citations · 972 across the 20 of their papers we have counts for
20 papers
Light-hole Exciton in Nanowire Quantum Dot
Mathieu Jeannin, Alberto Artioli, Pamela Rueda-Fonseca +7
Quantum dots inserted inside semiconductor nanowires are extremely promising candidates as building blocks for solid-state based quantum computation and communication. They provide…
Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy
P. Rueda-Fonseca, M. Orrù, E. Bellet-Amalric +6
With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires by gold-catalyzed molecular beam epitaxy at low temperature. In the…
Influence of free carriers on exciton ground states in quantum wells
A. A. Klochikhin, V. P. Kochereshko, S. Tatarenko
The influence of free carriers on the ground state of the exciton at zero magnetic field in a quasi-two-dimensional quantum well doped with electrons is considered in the framework…
Optical properties of single ZnTe nanowires grown at low temperature
Alberto Artioli, Pamela Rueda-Fonseca, Petr Stepanov +11
Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and a…
Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis
Martien Den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric +7
ZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexa…
Polarity determination in ZnSe nanowires by HAADF STEM
Martien Den Hertog, Miryam Elouneg-Jamroz, Edith Bellet-Amalric +7
High angle annular dark field scanning transmission electron microscopy is used to analyze the polarity of ZnSe nanowires grown, by molecular beam epitaxy, on GaAs substrates. The…