Defect-free ZnSe nanowire and nano-needle nanostructures

Abstract

We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.

4 pages, 4 figures

References in corpus (1)

• Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?

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