Defect-free ZnSe nanowire and nano-needle nanostructures
arXiv:0805.1818 · doi:10.1063/1.2991298
Abstract
We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.
4 pages, 4 figures