Ankit Sharma

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cond-mat.mtrl-sci2023

Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices

Sudipto Saha, Lingyu Meng, A F M Anhar Uddin Bhuiyan +4

The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demon…

cond-mat.mtrl-sci2022

Effective Electronic Structure of Monoclinic $β - (A l_{x} G a_{1 - x})_{2} O_{3}$ alloy semiconductor

Ankit Sharma, Uttam Singisetti

In this article, the electronic band structure $β - (A l_{x} G a_{1 - x})_{2} O_{3}$ alloy system is calculated with $β - G a_{2} O_{3}$ as the bulk crystal. The technique of band unfolding is implement…

Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices

Effective Electronic Structure of Monoclinic β−(Alx​Ga1−x​)2​O3​ alloy semiconductor

Effective Electronic Structure of Monoclinic $β - (A l_{x} G a_{1 - x})_{2} O_{3}$ alloy semiconductor