2 papers
cond-mat.mtrl-sci2023
Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices
Sudipto Saha, Lingyu Meng, A F M Anhar Uddin Bhuiyan +4
The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demon…
cond-mat.mtrl-sci2022
Effective Electronic Structure of Monoclinic alloy semiconductor
Ankit Sharma, Uttam Singisetti
In this article, the electronic band structure alloy system is calculated with as the bulk crystal. The technique of band unfolding is implement…