activity
20222024
most citedCompact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors

42 citations · 100 across the 9 of their papers we have counts for

collaborators

9 papers

physics.app-ph202411 cited

A Scalable Compact Model for the Static Drain Current of Graphene FETs

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Oihana Txoperena +2

The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induce…

cond-mat.mes-hall202322 cited

Exploiting ambipolarity in graphene field-effect transistors for novel designs on high-frequency analog electronics

Francisco Pasadas, Alberto Medina-Rull, Francisco G. Ruiz +8

Exploiting ambipolar electrical conductivity based on graphene field-effect transistors has raised enormous interest for high-frequency (HF) analog electronics. Controlling the dev…

cond-mat.mes-hall20235 cited

Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions

Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Aida Mansouri +7

Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for a…

physics.app-ph20233 cited

Static and small-signal modeling of radiofrequency hexagonal boron nitride switches

Anibal Pacheco-Sanchez, Omar Jordán-García, Eloy Ramŕez-García +1

A first modeling approximation of the general performance of radiofrequency (RF) switches based on hexagonal boron nitride (hBN), a two-dimensional (2D) dielectric material is pres…

cond-mat.mes-hall20235 cited

Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Md Hasibul Alam +5

1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range whe…

cond-mat.mes-hall20237 cited

Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs

Nikolaos Mavredakis, Anibal Pacheco-Sanchez, Wei Wei +3

We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-s…