5 papers
Dispersive Readout of a SiMOS Quantum Dot Using a Flip-Chip Integrated Microwave Resonator
Vo Kim Hieu Van, Santiago Serrano, Cédric Bohémier +11
The paper demonstrates a flip‑chip integration of a silicon MOS double quantum‑dot device with a superconducting microwave resonator, enabling dispersive readout of charge transiti…
SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
Thomas Van Caekenberghe, Paul Steinacker, Bart Raes +31
The authors fabricate silicon MOS spin qubits using extreme‑ultraviolet (EUV) lithography on 300 mm wafers and demonstrate sub‑nanometer gate control, high uniformity, and gate fid…
Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Md. Mamunur Rahman, Ensar Vahapoglu, Kok Wai Chan +16
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum…
Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling
Ssu-Chih Lin, Paul Steinacker, MengKe Feng +11
Spin shuttling offers a promising approach for developing scalable silicon-based quantum processors by addressing the connectivity limitations of quantum dots. In this work, we dem…
Scalable quantum current source on commercial CMOS process technology
Ajit Dash, Suyash Pati Tripathi, Dimitrios Georgakopoulos +17
Many quantum technologies require a precise electrical current standard that can only be achieved with expensive cryogenics, or through the secondary standards, such as resistance…