4 papers · 1 filter
Interaction between electronic structure and strain in Bi nanolines on Si(001)
J. H. G. Owen, K. Miki, D. R. Bowler
Heteroepitaxial strain can be a controlling factor in the lateral dimensions of 1-D nanostructures. Bi nanolines on Si(001) have an atomic structure which involves a large sub-surf…
Diffusion of a polaron in dangling bond wires on Si(001)
M. Todorovic, A. J. Fisher, D. R. Bowler
Injecting charge into dangling bond wires on Si(001) has been shown to induce polarons, which are weakly coupled to the underlying bulk phonons. We present elevated temperature tig…
Formation of clean dimers during gas-source growth of Si(001)
D. R. Bowler
Elevated temperature STM measurements have shown that one key phase during gas-source homoepitaxy of Si(001) is the formation of clean Si ad-dimers from hydrogenated ad-dimers, tho…
Tight binding studies of strained Ge/Si(001) growth
K. Li, D. R. Bowler, M. J. Gillan
Experimental observations of the growth of more than one monolayer of Ge on Si(001) show a progression of effects beyond the (2xN) reconstruction which is seen at submonolayer cove…