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cond-mat.mtrl-sci2025

XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates

Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4

AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…