From the 1 of 4 linked papers with an AI index.
4 papers
High-Q superconducting microwave resonators using MBE titanium nitride
Anand Ithepalli, Haoran Lu, Eegene Clara Chung +9
The authors use molecular beam epitaxy to grow high-quality TiN thin films on sapphire, achieving very low X‑ray rocking curve widths and superconducting coplanar waveguide resonat…
Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire
Anand Ithepalli, Saumya Vashishtha, Naomi Pieczulewski +7
We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of , $2^…
XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…
Quantum oscillations of holes in GaN
Chuan F. C. Chang, Joseph E. Dill, Zexuan Zhang +12
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radi…