140 citations · 445 across the 20 of their papers we have counts for
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Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation
Chuan Liao, Eckhart Fretwurst, Erika Garutti +6
In this work, the effects of Co -ray irradiation on high resistivity -type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, a…
Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors
Anja Himmerlich, Nuria Castello-Mor, Esteban Curras Rivera +7
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a signif…
Study of point- and cluster-defects in radiation-damaged silicon
Elena M. Donegani, Eckhart Fretwurst, Erika Garutti +5
Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution re…
Challenges for Silicon Pixel Sensors at the European XFEL
Robert Klanner, Julian Becker, Eckhart Fretwurst +4
A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition…
Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL
Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner +3
Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation dam…
Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations
J. Schwandt, E. Fretwurst, R. Klanner +2
The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the reco…
Study of X-ray Radiation Damage in Silicon Sensors
Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner +4
The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the rec…
Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon
Jiaguo Zhang, Ioana Pintilie, Eckhart Fretwurst +3
Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV pho…
Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors
Ioana Pintiliea, Gunnar Lindstroem, Alexandra Junkes +1
This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation…
Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
E. Fretwurst, G. Lindstrom, I. Pintilie +1
The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the…