activity
20022023
most citedRadiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors

140 citations · 445 across the 20 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

6 papers · 1 filter

cond-mat.mtrl-sci2023

Effect of pressure on the dynamics of iodine defects in MAPI: An atomistic simulation

Rachel Elizabeth Brophy, Movaffaq Kateb, Kristinn Torfason +4

The diffusion of iodine defects has been considered the most important degradation mechanism of methylammonium lead iodine (MAPI) in solar cells. The present study demonstrates the…

cond-mat.mtrl-sci2022★ 1 cited

Optoelectronic and stability properties of quasi-2D alkylammonium based perovskites

N. Filipoiu, Anca G. Mirea, Sarah Derbali +6

Electronic and stability properties of quasi-2D alkylammonium perovskites are investigated using density functional theory (DFT) calculations and validated experimentally on select…

cond-mat.mtrl-sci2022★ 1 cited

Capacitive and inductive effects in perovskite solar cells: the different roles of ionic current and ionic charge accumulation

Nicolae Filipoiu, Amanda Teodora Preda, Dragos Victor Anghel +8

Dynamic hysteresis effects have been long known to occur in the J-V characteristics of perovskite solar cells (PSCs), with the ionic migration being identified as the primary facto…

cond-mat.mtrl-sci2021★ 13 cited

Bistability of the BiOi complex and its implications on evaluating the acceptor removal

C. Besleaga, A. Kuncser, A. Nitescu +3

The dependencies of the BO defect concentration on doping, irradiation fluence and particle type in p-type silicon diodes have been investigated. We evidenced that larg…

cond-mat.mtrl-sci2016★ 51 cited

Dynamic electrical behavior of halide perovskite based solar cells

George Alexandru Nemnes, Cristina Besleaga, Andrei Gabriel Tomulescu +4

A dynamic electrical model is introduced to investigate the hysteretic effects in the I-V characteristics of perovskite based solar cells. By making a simple ansatz for the polariz…

cond-mat.mtrl-sci2006★ 28 cited

Comparison of near-interface traps in AlO/4H-SiC and AlO/SiO/4H-SiC structures

Marc Avice, Ulrike Grossner, Ioana Pintilie +3

Aluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of Capacitance Voltage…