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19952026
most citedRadiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors

140 citations · 682 across the 31 of their papers we have counts for

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Showing 2016 · physics.ins-detShow all

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physics.ins-det2016★ 1 cited

The influence of edge effects on the determination of the doping profile of silicon pad diodes

M. Hufschmidt, E. Fretwurst, E. Garutti +3

Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different…