140 citations · 682 across the 31 of their papers we have counts for
24 papers · 1 filter
Gain-Layer Project
Niels G. Sorgenfrei, Anna Rita Altamura, Cristina Besleaga +18
Gain-layer degradation from exposure to radiation limits the use of Low-Gain Avalanche Diodes (LGADs) in high energy particle physics detector experiments. Proper understanding of…
Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation
Chuan Liao, Eckhart Fretwurst, Erika Garutti +6
In this work, the effects of Co -ray irradiation on high resistivity -type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, a…
Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors
Anja Himmerlich, Nuria Castello-Mor, Esteban Curras Rivera +7
High-energy physics detectors, like Low Gain Avalanche Detectors (LGADs) that will be used as fast timing detectors in the High Luminosity LHC experiments, have to exhibit a signif…
A new model for the TCAD simulation of the silicon damage by high fluence proton irradiation
Joern Schwandt, Eckhart Fretwurst, Erika Garutti +3
For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiments, the estimated…
Study of point- and cluster-defects in radiation-damaged silicon
Elena M. Donegani, Eckhart Fretwurst, Erika Garutti +5
Non-ionising energy loss of radiation produces point defects and defect clusters in silicon, which result in a signifcant degradation of sensor performance. In this contribution re…
Determination of the p-spray profile for n+p silicon sensors using a MOSFET
E. Fretwurst, E. Garutti, R. Klanner +3
The standard technique to electrically isolate the implants of segmented silicon sensors fabricated on high-ohmic -type silicon are -implants. Although the knowledge…
The influence of edge effects on the determination of the doping profile of silicon pad diodes
M. Hufschmidt, E. Fretwurst, E. Garutti +3
Edge effects for square p+n pad diodes with guard rings, fabricated on high-ohmic silicon, are investigated. Using capacitance-voltage measurements of two pad diodes with different…
Impact of low-dose electron irradiation on n+p silicon strip sensors
The Tracker Group of the CMS Collaboration
The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were perfor…
Design and First Tests of a Radiation-Hard Pixel Sensor for the European X-Ray Free-Electron Laser
Joern Schwandt, Eckhart Fretwurst, Robert Klanner +2
The high intensity and high repetition rate of the European X-ray Free-Electron Laser, presently under construction in Hamburg, requires silicon sensors which can stand X-ray doses…
Study of X-ray radiation damage in the AGIPD sensor for the European XFEL
Jiaguo Zhang, Eckhart Fretwurst, Heinz Graafsma +3
The European X-ray Free Electron Laser (XFEL), currently being constructed in Hamburg and planning to be operational in 2017 for users, will deliver 27,000 fully coherent, high bri…
Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner +2
The collection of charge carriers generated in p+n strip sensors close to the Si-SiO2 interface before and after 1 MGy of X-ray irradiation has been investigated using the transien…
Study of the accumulation layer and charge losses at the Si-SiO2 interface in p+n-silicon strip sensors
Thomas Poehlsen, Julian Becker, Eckhart Fretwurst +3
Using the multi-channel Transient Current Technique the currents induced by electron-hole pairs, produced by a focussed sub-nanosecond laser of 660 nm wavelength close to the Si-Si…
Challenges for Silicon Pixel Sensors at the European XFEL
Robert Klanner, Julian Becker, Eckhart Fretwurst +4
A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition…
Design of the AGIPD Sensor for the European XFEL
J. Schwandt, E. Fretwurst, R. Klanner +1
For experiments at the European X-Ray Free-Electron Laser (XFEL) the Adaptive Gain Integrating Pixel Detector (AGIPD) is under development. The particular requirements for the dete…
Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL
Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner +3
Experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors which can withstand X-ray doses up to 1 GGy. For the investigation of X-ray radiation dam…
Charge losses in segmented silicon sensors at the Si-SiO2 interface
Thomas Poehlsen, Eckhart Fretwurst, Robert Klanner +3
Using multi-channel time-resolved current measurements (multi TCT), the charge collection of p+n silicon strip sensors for electron-hole pairs produced close to the Si-SiO2 interfa…
Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations
J. Schwandt, E. Fretwurst, R. Klanner +2
The European X-ray Free Electron Laser (XFEL) will deliver 27000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the reco…
Study of X-ray Radiation Damage in Silicon Sensors
Jiaguo Zhang, Eckhart Fretwurst, Robert Klanner +4
The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the rec…
Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon
Jiaguo Zhang, Ioana Pintilie, Eckhart Fretwurst +3
Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV pho…
Properties of a radiation-induced charge multiplication region in epitaxial silicon diodes
Jörn Lange, Julian Becker, Eckhart Fretwurst +2
Charge multiplication (CM) in pn epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent flue…
Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields
Julian Becker, Eckhart Fretwurst, Robert Klanner
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility…
Radiation Induced Point and Cluster-Related Defects with Strong Impact to Damage Properties of Silicon Detectors
Ioana Pintiliea, Gunnar Lindstroem, Alexandra Junkes +1
This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation…
The design and performance of the ZEUS Micro Vertex detector
A. Polini, I. Brock, S. Goers +79
In order to extend the tracking acceptance, to improve the primary and secondary vertex reconstruction and thus enhancing the tagging capabilities for short lived particles, the ZE…
Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation
E. Fretwurst, G. Lindstrom, I. Pintilie +1
The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the…