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cond-mat.mtrl-sci2002
Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy
J. Myslivecek, C. Schelling, F. Schaffler +4
Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of strai…
cond-mat.mtrl-sci2001
Effects of adsorbates on submonolayer growth
Miroslav Kotrla, Joachim Krug, Pavel Smilauer
The effects of adsorbates on nucleation and growth of two-dimensional islands is investigated by kinetic Monte Carlo simulations and rate equation theory. The variation of island m…
cond-mat.mtrl-sci2000
Submonolayer epitaxy with impurities
Miroslav Kotrla, Joachim Krug, Pavel Smilauer
The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species…