132 citations · 515 across the 16 of their papers we have counts for
16 papers
Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy
J. Myslivecek, C. Schelling, F. Schaffler +4
Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of strai…
Effects of adsorbates on submonolayer growth
Miroslav Kotrla, Joachim Krug, Pavel Smilauer
The effects of adsorbates on nucleation and growth of two-dimensional islands is investigated by kinetic Monte Carlo simulations and rate equation theory. The variation of island m…
Submonolayer epitaxy with impurities
Miroslav Kotrla, Joachim Krug, Pavel Smilauer
The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species…
Submonolayer growth with decorated island edges
Miroslav Kotrla, Joachim Krug, Pavel Smilauer
We study the dynamics of island nucleation in the presence of adsorbates using kinetic Monte Carlo simulations of a two-species growth model. Adatoms (A-atoms) and impurities (B-at…
Magic Islands and Barriers to Attachment: A Si/Si(111)7x7 Growth Model
J. Myslivecek, T. Jarolimek, P. Smilauer +2
Surface reconstructions can drastically modify growth kinetics during initial stages of epitaxial growth as well as during the process of surface equilibration after termination of…
Damping of Growth Oscillations
H. Kallabis, L. Brendel, P. Smilauer +2
Computer simulations and scaling theory are used to investigate the damping of oscillations during epitaxial growth on high-symmetry surfaces. The crossover from smooth to rough gr…