M. Brooks Tellekamp

collaborators

4 papers

physics.app-ph2024

Low Leakage Ferroelectric Heteroepitaxial Al $_{0.7}$ Sc $_{0.3}$ N Films on GaN

Keisuke Yazawa, Charles Evans, Elizabeth Dickey +3

Wurtzite (Al,Sc)N ferroelectrics are attractive for microelectronics applications due to their chemical and epitaxial structural compatibility with wurtzite semiconductors such as…

cond-mat.mtrl-sci2024

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Kingsley Egbo, Emily M. Garrity, William A. Callahan +6

NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…

cond-mat.mtrl-sci2024

Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys

Stephen Schaefer, Davi Febba, Kingsley Egbo +3

Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such u…

cond-mat.mtrl-sci2022

Designing low-cost TaC virtual substrates for $A l_{x} G a_{1 - x} N$ epitaxy

Dennice M. Roberts, Andrew Norman, Moira K. Miller +1

$A l_{x} G a_{1 - x} N$ is a critical ultra-wide bandgap material for optoelectronics, but the deposition of thick, high quality epitaxial layers has been hindered by a lack of lattice-mat…

Low Leakage Ferroelectric Heteroepitaxial Al0.7​Sc0.3​N Films on GaN

NiGa2​O4​ interfacial layers in NiO/Ga2​O3​ heterojunction diodes at high temperature

Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys

Designing low-cost TaC virtual substrates for Alx​Ga1−x​N epitaxy

Low Leakage Ferroelectric Heteroepitaxial Al $_{0.7}$ Sc $_{0.3}$ N Films on GaN

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Designing low-cost TaC virtual substrates for $A l_{x} G a_{1 - x} N$ epitaxy