Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

A. Talukder, M. Kashem, M. Hafiz +4

We electrically characterized melt-quenched amorphized Ge2Sb2Te5 (GST) phase-change memory cells of 20 nm thickness, ~66-124 nm width and ~100-600 nm length with and without photoe…