178 citations · 575 across the 10 of their papers we have counts for
6 papers · 1 filter
Revised theoretical limit of subthreshold swing in field-effect transistors
Arnout Beckers, Farzan Jazaeri, Christian Enz
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temp…
Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures
Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi +3
This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena…
Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi +3
In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and…
Cryogenic MOS Transistor Model
Arnout Beckers, Farzan Jazaeri, Christian Enz
This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to…
Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing
Arnout Beckers, Farzan Jazaeri, Andrea Ruffino +3
This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundament…
Negative Capacitance as Digital and Analog Performance Booster for Complementary MOS Transistors
Ali Saeidi, Farzan Jazaeri, Igor Stolichnov +2
Boltzmann tyranny poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10…