178 citations · 618 across the 13 of their papers we have counts for
14 papers
Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures
Hongwei Tang, Attilio Belmonte, Dennis Lin +10
While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semico…
Theoretical Limit of MOSFET Subthreshold Swing at Sub-Kelvin Temperatures
Arnout Beckers
Fully conductive band tails cause the subthreshold swing to saturate at temperatures above 1 K. However, recent measurements indicate that below 1 K, the subthreshold swing in cert…
Generalized Boltzmann relations in semiconductors including band tails
Arnout Beckers, Dominique Beckers, Farzan Jazaeri +2
Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponen…
Inflection Phenomenon in Cryogenic MOSFET Behavior
Arnout Beckers, Farzan Jazaeri, Christian Enz
This brief reports the analytical modeling and measurements of the inflection in the MOSFET transfer characteristics at cryogenic temperatures. Inflection is the inward bending of…
Robust Simulation of Poisson's Equation in a P-N Diode Down to 1 μK
Arnout Beckers
Semiconductor devices are notoriously difficult to simulate at deep-cryogenic temperatures. The lowest temperature that can be simulated today in commercial TCAD is around 4.2 K, p…
Bounded Distribution Functions for Applied Physics, Especially Electron Device Simulation at Deep-Cryogenic Temperatures
Arnout Beckers
Numerical underflow and overflow are major hurdles for rolling-out the modeling and simulation infrastructure for temperatures below about 50 K. Extending the numeric precision is…
Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing
Arnout Beckers, Jakob Michl, Alexander Grill +7
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance comp…
A Review on Quantum Computing: Qubits, Cryogenic Electronics and Cryogenic MOSFET Physics
Farzan Jazaeri, Arnout Beckers, Armin Tajalli +1
Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts…
Cryogenic MOSFET Threshold Voltage Model
Arnout Beckers, Farzan Jazaeri, Christian Enz
This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisso…
Revised theoretical limit of subthreshold swing in field-effect transistors
Arnout Beckers, Farzan Jazaeri, Christian Enz
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temp…
Characterization and Modeling of 28-nm FDSOI CMOS Technology down to Cryogenic Temperatures
Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi +3
This paper presents an extensive characterization and modeling of a commercial 28-nm FDSOI CMOS process operating down to cryogenic temperatures. The important cryogenic phenomena…
Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing
Arnout Beckers, Farzan Jazaeri, Heorhii Bohuslavskyi +3
In this paper a commercial 28-nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and…
Cryogenic MOS Transistor Model
Arnout Beckers, Farzan Jazaeri, Christian Enz
This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to…
Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing
Arnout Beckers, Farzan Jazaeri, Andrea Ruffino +3
This paper presents the first experimental investigation and physical discussion of the cryogenic behavior of a commercial 28 nm bulk CMOS technology. Here we extract the fundament…