activity
20032021
most citedLong-range Kondo signature of a single magnetic impurity

133 citations · 445 across the 15 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

8 papers · 1 filter

cond-mat.mes-hall2021★ 2 cited

Scanning Tunneling Spectroscopy of Subsurface Ag and Ge Impurities in Copper

Thomas Kotzott, Mohammed Bouhassoune, Henning Prüser +3

We investigate single Ge and Ag impurities buried below a Cu(100) surface using low temperature scanning tunneling microscopy. The interference patterns in the local density of sta…

cond-mat.mes-hall2019★ 38 cited

Substrate induced nanoscale resistance variation in epitaxial graphene

Anna Sinterhauf, Georg Alexander Traeger, Davood Momeni Pakdehi +8

Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies…

cond-mat.mes-hall2013★ 15 cited

Fixing the Energy Scale in Scanning Tunneling Microscopy on Semiconductor Surfaces

Gerhard Münnich, Andrea Donarini, Martin Wenderoth +1

In scanning tunneling experiments on semiconductor surfaces, the energy scale within the tunneling junction is usually unknown due to tip-induced band bending. Here, we experimenta…

cond-mat.mes-hall2012★ 43 cited

Mapping Itinerant Electrons around Kondo Impurities

Henning Prüser, Martin Wenderoth, Alexander Weismann +1

We investigate single Fe and Co atoms buried below a Cu(100) surface using low temperature scanning tunneling spectroscopy. By mapping the local density of states of the itinerant…

cond-mat.mes-hall2010★ 45 cited

Theory of real space imaging of Fermi surfaces

Samir Lounis, Peter Zahn, Alexander Weismann +5

A scanning tunneling microscope can be used to visualize in real space Fermi surfaces with buried impurities far below substrates acting as local probes. A theory describing this f…

cond-mat.mes-hall2007★ 13 cited

Band structure related wave function symmetry of amphoteric Si dopants in GaAs

S. Loth, M. Wenderoth, K. Teichmann +1

Autocompensated Si-doped GaAs is studied with cross-sectional scanning tunneling spectroscopy (X-STS). The local electronic contrasts of substitutional Si(Ga) donors and Si(As) acc…