9 citations · 15 across the 6 of their papers we have counts for
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cond-mat.mtrl-sci2022
A phase field model combined with genetic algorithm for polycrystalline hafnium zirconium oxide ferroelectrics
Sandeep Sugathan, Krishnamohan Thekkepat, Soumya Bandyopadhyay +2
Ferroelectric hafnium zirconium oxide (HZO) thin films show significant promise for applications in ferroelectric random-access memory, ferroelectric field-effect transistors, and…
physics.app-ph2022★ 9 cited
Factors that control stability, variability, and reliability issues of endurance cycle in ReRAM devices: a phase field study
Arijit Roy, Min-Gyu Cho, Pil-Ryung Cha
The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the paramet…