48 citations · 51 across the 3 of their papers we have counts for
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physics.app-ph2021★ 1 cited
A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance
Fengwen Mu, Bin Xu, Xinhua Wang +11
To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but…
physics.app-ph2020
Modulation of interfacial thermal transport between fumed silica nanoparticles by surface chemical functionalization for advanced thermal insulation
Takashi Kodama, Nobuhiro Shinohara, Shih-Wei Hung +4
Since solid-state heat transport in a highly porous nanocomposite strongly depends on the thermal boundary conductance (TBC) between constituent nanomaterials, further suppression…
physics.app-ph2019★ 2 cited
High Thermal Boundary Conductance across Bonded Heterogeneous GaN-SiC Interfaces
Fengwen Mu, Zhe Cheng, Jingjing Shi +5
GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced…