activity
20192026
most citedAbove-room-temperature giant thermal conductivity switching in spintronic multilayer

48 citations · 164 across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mtrl-sci2026

Observation of coherently modulated thermal phonon band and lifetime in superlattice

Yuxuan Liao, Hiroshi Uchiyama, Naomi Nagai +12

Manipulating phonon band structures through wave interference in artificial periodic nanostructures is of fundamental interest and forms the foundation of phonon band engineering.…

cond-mat.mtrl-sci2024

Enhancing and Mapping Thermal Boundary Conductance across Bonded Si/SiC Interface

Rulei Guo, Bin Xu, Fengwen Mu +1

SiC is a promising substrate for Si-on-insulator (SOI) wafers for efficient thermal management owing to its high thermal conductivity and large bandgap. However, fabricating a Si d…

cond-mat.mtrl-sci2024★ 1 cited

Low thermal boundary resistance at bonded GaN/diamond interface by controlling ultrathin heterogeneous amorphous layer

Bin Xu, Fengwen Mu, Yingzhou Liu +3

Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN a…

cond-mat.mtrl-sci2024★ 5 cited

Non-equilibrium Magnon Engineering Enabling Significant Thermal Transport Modulation

Takamasa Hirai, Toshiaki Morita, Subrata Biswas +13

Thermal conductivity, a fundamental parameter characterizing thermal transport in solids, is typically determined by electron and phonon transport. Although other transport propert…

cond-mat.mtrl-sci2021★ 33 cited

Phase-transition-induced giant Thomson effect for thermoelectric cooling

Rajkumar Modak, Masayuki Murata, Dazhi Hou +7

The Seebeck and Peltier effects have been widely studied and used in various thermoelectric technologies, including thermal energy harvesting and solid-state heat pumps. However, b…

physics.app-ph2021★ 1 cited

A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance

Fengwen Mu, Bin Xu, Xinhua Wang +11

To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but…