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cond-mat.mtrl-sci2018★ 5 cited
Growth-Temperature Dependence of Conductivity at the LaCrO/SrTiO (001) Interface
A. H. Al-Tawhid, J. R. Frick, D. B. Dougherty +1
The effect of growth conditions on the structural and electronic properties of the polar/non-polar LaCrO/SrTiO (LCO/STO) interface has been investigated. The interface is e…
cond-mat.mtrl-sci2011
The effect of p-type doping on the oxidation of H-Si(111) studied by second-harmonic generation
Bilal Gokce, Daniel B. Dougherty, Kenan Gundogdu
Atomic force microscopy and second-harmonic generation data show that boron doping enhances the rate of oxidation of H-terminated silicon. Holes cause a greater increase in the rea…