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physics.app-ph2021★ 2 cited
Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models
Tengteng Lu, Yuanke Zhang, Yujing Zhang +3
Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evoluti…
physics.app-ph2021
Characterization and Modeling of Native MOSFETs Down to 4.2 K
Yuanke Zhang, Tengteng Lu, Wenjie Wang +4
The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on…
physics.app-ph2021
Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K
Yuanke Zhang, Chao Luo, Tengteng Lu +3
Wide attention has been focused on cryogenic CMOS (Cryo-CMOS) operation because of its wide application and the improvement of CMOS performance. However, hot carrier degradation (H…