2 citations · 3 across the 2 of their papers we have counts for
5 papers
Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models
Tengteng Lu, Yuanke Zhang, Yujing Zhang +3
Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evoluti…
Cryogenic low power CMOS analog buffer at 4.2K
Yajie Huang, Chao Luo, Tengteng Lu +3
A novel power-efficient analog buffer at liquid helium temperature is proposed. The proposed circuit is based on an input stage consisting of two complementary differential pairs t…
Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature
Tengteng Lu, Zhen Li, Chao Luo +3
Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18μm standard bulk CMOS technology(1.8V and 5V) at sub-ke…
MOSFET Characterization and Modeling at Cryogenic Temperatures
Chao Luo, Zhen Li, TengTeng Lu +2
Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technolo…
Cryogenic Characerization and Modeling of Standard CMOS down to Liquid Helium Temperature for Quantum Computing
Zhen Li, Chao Luo, Tengteng Lu +3
Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios…