77 citations · 130 across the 8 of their papers we have counts for
8 papers
Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature
Yuanke Zhang, Yuefeng Chen, Yifang Zhang +3
Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain (). In this paper, we characterize lateral bipolar junction…
Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models
Tengteng Lu, Yuanke Zhang, Yujing Zhang +3
Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evoluti…
Characterization and Modeling of Native MOSFETs Down to 4.2 K
Yuanke Zhang, Tengteng Lu, Wenjie Wang +4
The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on…
Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K
Yuanke Zhang, Chao Luo, Tengteng Lu +3
Wide attention has been focused on cryogenic CMOS (Cryo-CMOS) operation because of its wide application and the improvement of CMOS performance. However, hot carrier degradation (H…
Cryogenic low power CMOS analog buffer at 4.2K
Yajie Huang, Chao Luo, Tengteng Lu +3
A novel power-efficient analog buffer at liquid helium temperature is proposed. The proposed circuit is based on an input stage consisting of two complementary differential pairs t…
Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature
Tengteng Lu, Zhen Li, Chao Luo +3
Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18μm standard bulk CMOS technology(1.8V and 5V) at sub-ke…