26 citations · 31 across the 6 of their papers we have counts for
10 papers · 1 filter
Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications
Bolun Zeng, Haochen Zhang, Zikun Xiang +9
The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteri…
Design of Cryogenic Fully Differential Gain Boosting-OTA by the methodology used for a 14 bit Pipelined-SAR ADC
Mingjie Wen, Chao Luo, BoLun Zeng +1
Quantum computing (QC) requires cryogenic electronic circuits as control and readout sub-systems of quantum chips to meet the qubit scale-up challenges.At this temperature,MOSFETs…
Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models
Tengteng Lu, Yuanke Zhang, Yujing Zhang +3
Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evoluti…
Characterization and Modeling of Native MOSFETs Down to 4.2 K
Yuanke Zhang, Tengteng Lu, Wenjie Wang +4
The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on…
Hot Carrier Degradation in MOSFETs at Cryogenic Temperatures Down to 4.2 K
Yuanke Zhang, Chao Luo, Tengteng Lu +3
Wide attention has been focused on cryogenic CMOS (Cryo-CMOS) operation because of its wide application and the improvement of CMOS performance. However, hot carrier degradation (H…
Cryogenic low power CMOS analog buffer at 4.2K
Yajie Huang, Chao Luo, Tengteng Lu +3
A novel power-efficient analog buffer at liquid helium temperature is proposed. The proposed circuit is based on an input stage consisting of two complementary differential pairs t…