2 citations · 3 across the 3 of their papers we have counts for
8 papers
Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models
Tengteng Lu, Yuanke Zhang, Yujing Zhang +3
Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evoluti…
Cryogenic low power CMOS analog buffer at 4.2K
Yajie Huang, Chao Luo, Tengteng Lu +3
A novel power-efficient analog buffer at liquid helium temperature is proposed. The proposed circuit is based on an input stage consisting of two complementary differential pairs t…
Characterization of 0.18μm CMOS Ring Oscillator at Liquid Helium Temperature
Chao Luo, Tengteng Lu, Zhen Li +2
This paper presents low power dissipation, low phase noise ring oscillators (ROs) based on Semiconductor Manufacturing International Corporation (SMIC) 0.18μm CMOS technology at li…
Design of graphene waveguide: Effect of edge orientation and waveguide configuration
Nayyar Abbas Shah, Vahid Mosallanejad, Kuei-Lin Chiu +1
Electron transport in a graphene quantum well can be analogous to photon transmission in an optical fiber. In this work, we present a detailed theoretical analysis to study the tra…
Characterization and Modeling of 0.18μm CMOS Technology at sub-Kelvin Temperature
Tengteng Lu, Zhen Li, Chao Luo +3
Previous cryogenic electronics studies are most above 4.2K. In this paper we present the cryogenic characterization of a 0.18μm standard bulk CMOS technology(1.8V and 5V) at sub-ke…
MOSFET Characterization and Modeling at Cryogenic Temperatures
Chao Luo, Zhen Li, TengTeng Lu +2
Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technolo…