activity
20172023
most citedMOSFET Characterization and Modeling at Cryogenic Temperatures

77 citations · 175 across the 15 of their papers we have counts for

collaborators

15 papers

physics.app-ph2023

Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature

Yuanke Zhang, Yuefeng Chen, Yifang Zhang +3

Conventional silicon bipolars are not suitable for low-temperature operation due to the deterioration of current gain (). In this paper, we characterize lateral bipolar junction…

cond-mat.mes-hall2022★ 26 cited

Sliding nanomechanical resonators

Yue Ying, Zhuo-Zhi Zhang, Joel Moser +3

The motion of a vibrating object is determined by the way it is held. This simple observation has long inspired string instrument makers to create new sounds by devising elegant st…

physics.app-ph2022★ 2 cited

Characterization of GaN-based HEMTs Down to 4.2 K for Cryogenic Applications

Bolun Zeng, Haochen Zhang, Zikun Xiang +9

The cryogenic performance of GaN-based HEMTs (high-electron-mobility transistors) is systematically investigated by the direct current (DC) and low-frequency noise (LFN) characteri…

physics.app-ph2022

Design of Cryogenic Fully Differential Gain Boosting-OTA by the methodology used for a 14 bit Pipelined-SAR ADC

Mingjie Wen, Chao Luo, BoLun Zeng +1

Quantum computing (QC) requires cryogenic electronic circuits as control and readout sub-systems of quantum chips to meet the qubit scale-up challenges.At this temperature,MOSFETs…

physics.app-ph2021★ 2 cited

Cryogenic Modeling of MOSFET Device Based on BSIM and EKV Models

Tengteng Lu, Yuanke Zhang, Yujing Zhang +3

Kink effect is a large obstacle for the cryogenic model of inversion-type bulk silicon MOSFET devices. This letter used two methods to correct the kink effect: the modified evoluti…

physics.app-ph2021★ 45 cited

Characterization and Modeling of Native MOSFETs Down to 4.2 K

Yuanke Zhang, Tengteng Lu, Wenjie Wang +4

The extremely low threshold voltage (Vth) of native MOSFETs (Vth~0V@300K) is conducive to the design of cryogenic circuits. Previous research on cryogenic MOSFETs mainly focused on…