Growth and Characterization of Homoepitaxial $\beta$-Ga${}_2$O${}_3$ Layers

M. Brooks Tellekamp, Karen N. Heinselman, Steve Harvey +2

$\beta$-Ga${}_2$O${}_3$ is a next-generation ultra wide bandgap semiconductor (E${}_g$ = 4.8 eV to 4.9 eV) that can be homoepitaxially grown on commercial substrates, enabling next-generatio…