activity
20192021
collaborators

6 papers

cond-mat.mes-hall2021

Characterization of Carrier Cooling Bottleneck in Silicon Nanoparticles by Extreme Ultraviolet (XUV) Transient Absorption Spectroscopy

Ilana J. Porter, Angela Lee, Scott K. Cushing +4

Silicon nanoparticles have the promise to surpass the theoretical efficiency limit of single-junction silicon photovoltaics by the creation of a "phonon bottleneck", a theorized sl…

cond-mat.mtrl-sci2020

Electron Thermalization and Relaxation in Laser-Heated Nickel by Few-Femtosecond Core-Level Transient Absorption Spectroscopy

Hung-Tzu Chang, Alexander Guggenmos, Scott K. Cushing +9

Direct measurements of photoexcited carrier dynamics in nickel are made using few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy at the nickel M ed…

physics.optics2020

Entangled light-matter interactions and spectroscopy

Szilard Szoke, Hanzhe Liu, Bryce P. Hickam +2

Entangled photons exhibit non-classical light-matter interactions that create new opportunities in materials and molecular science. For example, in entangled two-photon absorption,…

cond-mat.mtrl-sci2019

Differentiating Photoexcited Carrier and Phonon Dynamics in the Δ, L, and Γ Valleys of Si(100) with Transient Extreme Ultraviolet Spectroscopy

Scott K. Cushing, Angela Lee, Ilana J. Porter +4

Transient extreme ultraviolet (XUV) spectroscopy probes core level transitions to unoccupied valence and conduction band states. Uncertainty remains to what degree the core-hole cr…

cond-mat.mtrl-sci2019

Photoexcited Small Polaron Formation in Goethite (α-FeOOH) Nanorods Probed by Transient Extreme Ultraviolet Spectroscopy

Ilana J. Porter, Scott K. Cushing, Lucas M. Carneiro +6

Small polaron formation limits the mobility and lifetimes of photoexcited carriers in metal oxides. As the ligand field strength increases, the carrier mobility decreases, but the…

cond-mat.mtrl-sci2019

Layer-Resolved Ultrafast XUV Measurement of Hole Transport in a Ni-TiO2-Si Photoanode

Scott K. Cushing, Ilana J. Porter, Bethany R. Lamoureux +5

Metal-oxide-semiconductor junctions are central to most electronic and optoelectronic devices. Here, the element-specificity of broadband extreme ultraviolet (XUV) ultrafast pulses…