Hole conductivity through a defect band in $\mathrm{ZnG}{\mathrm{a}}_2{\mathrm{O}}_4$

Fernando P. Sabino, Intuon Chatratin, Anderson Janotti +1

Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy…