72 citations · 172 across the 12 of their papers we have counts for
12 papers · 1 filter
Alloy engineering of Magnetic phases in two-dimensional Chromium Trihalides
Pedro Roberto Lopes Vieira, Daniel D. Rivera, Lucas Martin Farigliano +2
Two-dimensional magnetic materials offer unique opportunities for exploring low-dimensional spin phenomena and next-generation spintronic devices. Chromium trihalides CrX3 (X = Cl,…
Upward band gap bowing and negative mixing enthalpy in multi-component cubic halide perovskite alloys
Xiuwen Zhang, Fernando P. Sabino, Jia-Xin Xiong +1
Physical properties intermediate between constituents of alloys can be achieved as downward convex positive bowing, upward concave negative bowing, or zero bowing. Such bowing effe…
Exchange field induced symmetry breaking in quantum hexaborides
D. Rivera, Fernando P. Sabino, H. Raebiger +3
Symmetry breaking (SB) has proven to be a powerful approach for describing quantum materials: strong correlation, mass renormalization, and complex phase transitions are among the…
Dramatic enhancement of visible-light absorption in TiO2 by adding Bi
Fernando P. Sabino, Anderson Janotti
TiO2 is a wide band-gap semiconductor that has been intensively investigated for photocatalysis and water-spiting. However, weak light absorption in the visible region of the spect…
Hole conductivity through a defect band in
Fernando P. Sabino, Intuon Chatratin, Anderson Janotti +1
Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of - and -type doping are highly desirable for high-energy…
Intrinsic doping limitations in inorganic lead halide perovskites
Fernando P. Sabino, Alex Zunger, Gustavo M. Dalpian
Inorganic Halide perovskites (HP's) of the CsPbX3 (X=I, Br, Cl) type have reached prominence in photovoltaic solar cell efficiencies. Peculiarly, they have shown, however, an asymm…
Bismuth-doped Ga2O3 as candidate for p-type transparent conducting material
Fernando P. Sabino, Xuefen Cai, Su-Huai Wei +1
Gallium oxide (Ga2O3) is a wide-band-gap semiconductor promising for UV sensors and high power transistor applications, with Baliga's figure of merit that far exceeds those of GaN…
Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films
Shouvik Chatterjee, Shoaib Khalid, Hadass S. Inbar +10
Observation of large non-saturating magnetoresistance in rare-earth monopnictides has raised enormous interest in understanding the role of its electronic structure. Here, by a com…
Enabling visible-light absorption and p-type doping in In2O3 by adding Bi
Fernando P. Sabino, Su-Huai Wei, Anderson Janotti
In2O3 is a prototype wide-band-gap semiconductor that exhibits metallic conductivity when highly doped with Sn while retaining a high degree of transparency to visible light. It is…
Large Disparity Between Optical and Fundamental Band Gaps in Layered In2Se3
Wei Li, Fernando P. Sabino, Felipe Crasto de Lima +3
InSe is a semiconductor material that can be stabilized in different crystal structures (at least one 3D and several 2D layered structures have been reported) with diverse…
A Comprehensive Study of -Factors, Elastic, Structural and Electronic Properties of III-V Semiconductors using Hybrid-Density Functional Theory
Carlos M. O. Bastos, Fernando P. Sabino, Guilherme M. Sipahi +1
Despite the large number of theoretical III-V semiconductor studies reported every year, our atomistic understanding is still limited. The limitations of the theoretical approaches…
Stability and accuracy control of parameters
Carlos M. O. Bastos, Fernando P. Sabino, Paulo E. Faria Junior +3
The method is a successful approach to obtain band structure, optical and transport properties of semiconductors, and it depends on external parameters that ar…