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cond-mat.mes-hall2020★ 6 cited
N-nH complexes in GaAs studied at the atomic scale by cross-sectional scanning tunneling microscopy
D. Tjeertes, T. J. F. Verstijnen, A. Gonzalo +10
Hydrogenation of nitrogen (N) doped GaAs allows for reversible tuning of the bandgap and the creation of site controlled quantum dots through the manipulation of N-nH complexes, N-…
cond-mat.mes-hall2019★ 6 cited
Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure
A. Müller, C. Şahin, M. Z. Minhas +2
We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an electron gas. Charge is injected by tunneling from t…