48 citations · 118 across the 5 of their papers we have counts for
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physics.app-ph2019★ 22 cited
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
P. Fiorenza, M. Vivona, S. Di Franco +5
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations.…
physics.app-ph2019★ 48 cited
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano +6
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-S…