22 citations · 36 across the 2 of their papers we have counts for
5 papers
Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures
Marilena Vivona, Gabriele Bellocchi, Raffaella Lo Nigro +2
In this paper, we investigate the electrical evolution of tungsten (W) and tungsten carbide (WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing…
Ni Schottky barrier on heavily doped phosphorous implanted 4H-SiC
Marilena Vivona, Giuseppe Greco, Monia Spera +4
The electrical behavior of Ni Schottky barrier formed onto heavily doped (ND>1019 cm-3) n-type phosphorous implanted silicon carbide (4H-SiC) was investigated, with a focus on the…
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
Marilena Vivona, Giuseppe Greco, Gabriele Bellocchi +5
In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I-V) analysis in forward bias, pe…
Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering
P. Fiorenza, M. Vivona, S. Di Franco +5
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations.…
Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors
Patrick Fiorenza, Marilena Vivona, Ferdinando Iucolano +6
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-S…