44 citations · 199 across the 10 of their papers we have counts for
Showing 2024 · physics.app-phShow all
2 papers · 2 filters
physics.app-ph2024
Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C
P. Fiorenza, F. Cordiano, S. M. Alessandrino +6
The gate oxide lifetime in 4H-SiC power MOSFETs is typically assessed at fixed and constant gate bias stress, monitoring the time-dependent dielectric breakdown (TDDB).
physics.app-ph2024
Complementary two dimensional carrier profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy
Patrick Fiorenza, Marco Zignale, Edoardo. Zanetti +6
This paper reports the results presented in an invited poster during the International Conference on Silicon Carbide and Related Materials (ICSCRM) 2023 held in Sorrento, Italy. Th…